PART |
Description |
Maker |
W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册,瓦特/锁相环,葡萄多糖
|
Optrex America, Inc. 3M Company
|
W3EG2128M72AFSR-D3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA
|
White Electronic Design...
|
W3HG2128M72ACERXXXAD6SG W3HG2128M72ACER403AD6XG W3 |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP
|
WEDC[White Electronic Designs Corporation]
|
WV3HG2128M72EEU806AD4MG |
2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL
|
White Electronic Design...
|
WV3HG2128M72EEU534AD4MG WV3HG2128M72EEU806AD4SG WV |
2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
EBJ21EE8BAWA-8C-E EBJ21EE8BAWA-AE-E EBJ21EE8BAWA-D |
256M X 72 DDR DRAM MODULE, DMA240 2GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66 DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
HY5DU12422CLTP HY5DU12422CLTP-X HY5DU121622CTP-X H |
CAP.00047UF 16V PPS FILM 0603 2% 512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. DDR SDRAM Specification Version 0.61 128Mb DDR SDRAM 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|